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Estudo teórico de antissítios e impureza substitucional de oxigênio em nanofio de SiC
(Universidade Federal de Santa Maria, 2010-09-23)
In this work first we perform a study about the stability, and the electronic properties of SiC growth in the [111] direction when defects are present. We use the supercell method and the dangling bonds on the surface of ...