Processamento de sinais analógicos amostrados utilizando técnicas de chaveamento a capacitor e a corrente aplicados à conversão AD sigma delta

Abstract

Circuits for sampling and retention of analogue signals are commonly implemented with techniques such as switched capacitors (SC). SC circuits employing the storage of charge in a linear capacitor to represent a signal in the form of voltage. Operational Amplifiers (AmpOp's) are used to transfer the load of a capacitor to another, sampling and holding circuits for analogue signals in closed loop. Recently, another technique has been developed without the need of building linear capacitors, making possible projects compatible with VLSI CMOS processes. This technique, called Switched Current (SI), is characterized by processing the signals in the current form, and implemented through the memory retention of electric charge on the gate of a MOS transistor in saturation zone. The charge is hold in a gate-source voltage and hence the current in a transistor. In this model, the excursion of the signal is not directly dependent on the supply voltage, but dependent on the polarization and current signal. This makes the model attractive for low voltage. The technique does not require AmpOp's and capacitors. The speed of the circuit is not limited by AmpOp's and its gainbandwidth product, but by design and manufacturing process. This technique is not yet consolidated and its performance is still not competitive with SC circuits [1] However, SI circuits become interesting as they constitute an open field for future research and the opportunity to be fully implemented in processes manufacturing oriented to purely digital circuits. This work begins with a framework of the subject matter, placing the reader in the state of the art manufacturing technology and some implications that directly affect analog circuits. Are also presented in this section some implementations which serve to characterize what is being done recently in terms of Sigma Delta (ΣΔ) modulators. Abstract vi In Chapter 2, are made a review of sampling and holding bases, the AD conversion techniques with focuses in oversampled AD converters, the circuits that implementing SC and SI modulators and their influences, and finally a review of the nonidealities that involve the practice of project. Chapter 3 a comparative study is done between memory cells SC and SI. Based on a simplified model of small signals, the behavior analyzes on the signal-noise-ratio (SNR), power consumption and speed, providing indications of performance throughout the operating region of MOS transistors. Chapter 4 deals with the initial specifications for the development of a ΣΔ AD converter for a specific implementation. The s tudies and estimates lead to pre-design of the project's ultimate goal the creation of a ΣΔ modulator in the SC and SI techniques. In Chapter 5 is intended to make the measures and tests that establish the standards of comparison, the discussion of results and conclusions. Finally, in Chapter 6, an alternative proposal is presented based on an architecture that performs a sigma-delta modulator with low distortion, implemented with SI circuit. The final conclusions and contributions are presented in Chapter 7.